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BAP70-04W Scheda tecnica(PDF) 2 Page - NXP Semiconductors

Il numero della parte BAP70-04W
Spiegazioni elettronici  Silicon PIN diode
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAP70-04W Scheda tecnica(HTML) 2 Page - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 5 March 2004
2 of 7
Philips Semiconductors
BAP70-04W
Silicon PIN diode
4.
Marking
5.
Limiting values
6.
Thermal characteristics
7.
Characteristics
Table 3:
Marking
Type number
Marking code
BAP70-04W
1Np
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VR
continuous reverse voltage
-
50
V
IF
continuous forward current
-
100
mA
Ptot
total power dissipation
Ts = 90 °C
-
260
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-s)
thermal resistance from junction
to soldering point
230
K/W
Table 6:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
IF = 50 mA
0.95
1.1
V
IR
reverse current
VR =50V
-
20
nA
Cd
diode capacitance
see Figure 1; f = 1 MHz;
VR = 0 V
600
-
fF
VR = 1 V
430
-
fF
VR = 20 V
250
300
fF


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