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BAP70-04W Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BAP70-04W Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 9397 750 12557 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 — 5 March 2004 2 of 7 Philips Semiconductors BAP70-04W Silicon PIN diode 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics Table 3: Marking Type number Marking code BAP70-04W 1Np Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VR continuous reverse voltage - 50 V IF continuous forward current - 100 mA Ptot total power dissipation Ts = 90 °C - 260 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Table 5: Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-s) thermal resistance from junction to soldering point 230 K/W Table 6: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage IF = 50 mA 0.95 1.1 V IR reverse current VR =50V - 20 nA Cd diode capacitance see Figure 1; f = 1 MHz; VR = 0 V 600 - fF VR = 1 V 430 - fF VR = 20 V 250 300 fF |
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