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IRLML6402TR Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRLML6402TR Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRLML6402 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V trr Reverse Recovery Time ––– 29 43 ns TJ = 25°C, IF = -1.0A Qrr Reverse RecoveryCharge ––– 11 17 nC di/dt = -100A/µs Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics -1.3 -22 A S D G ** For recommended footprint and soldering techniques refer to application note #AN-994. Surface mounted on 1" square single layer 1oz. copper FR4 board, steady state. Starting TJ = 25°C, L = 1.65mH RG = 25Ω, IAS = -3.7A. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.050 0.065 VGS = -4.5V, ID = -3.7A ––– 0.080 0.135 VGS = -2.5V, ID = -3.1A VGS(th) Gate Threshold Voltage -0.40 -0.55 -0.95 V VDS = VGS, ID = -250µA gfs Forward Transconductance 6.0 ––– ––– S VDS = -10V, ID = -3.7A ––– ––– -1.0 VDS = -20V, VGS = 0V ––– ––– -25 VDS = -20V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 8.0 12 ID = -3.7A Qgs Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -5.0V td(on) Turn-On Delay Time ––– 350 ––– VDD = -10V tr Rise Time ––– 48 ––– ID = -3.7A td(off) Turn-Off Delay Time ––– 588 ––– RG = 89Ω tf Fall Time ––– 381 ––– RD = 2.7Ω Ciss Input Capacitance ––– 633 ––– VGS = 0V Coss Output Capacitance ––– 145 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns |
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