Data Sheet D14058EJ1V0DS

7

2SK3297

PACKAGE DRAWING(Unit: mm)

Isolated TO-220 (MP-45F)

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,

and quickly dissipate it once, when it has occurred.

1.Gate

2.Drain

3.Source

10.0±0.3

3.2±0.2

φ

0.7±0.1

1.3±0.2

1.5±0.2

2.54 TYP.

2.54 TYP.

123

2.5±0.1

0.65±0.1

4.5±0.2

2.7±0.2

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Drain