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3TT16F1 Scheda tecnica(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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3TT16F1 Scheda tecnica(HTML) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
2 / 10 page R 3TT16Z/C/J/F/F1 版本: 201612I 2/10 绝对最大额定值 ABSOLUTE RATINGS (TC=25℃) 项 目 Parameter 符 号 Symbol 试 验 条 件 Condition 数 值 Value 单位 Unit 重复峰值断态电压 Repetitive peak off-state voltage VDRM ± 600 ± 800 V 通态方均根电流 On-state RMS current IT(RMS) full sine wave, 16 A full sine wave ,t=20ms 150 A 非重复浪涌峰值通态电流 Non- repetitive surge peak on-state current ITSM full sine wave ,t=16.7ms 161 A I2t t=10ms 112.5 A2s 通态电流临界上升率 Repetitive rate of rise of on-state current after triggering dI/dt ITM=20A, IG=0.2A, dIG/dt=0.2A/μs 100 A/μs 峰值门极电流 Peak gate current IGM 2 A 峰值门极电压 Peak gate voltage VGM 5 V 峰值门极功率 Peak gate power PGM 5 W 平均门极功率 Average gate power PG(AV) over any 20ms period 0.5 W 存储温度 Storage temperature Tstg -40~150 ℃ 操作结温 Operation junction temperature TVJ 125 ℃ |
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