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SI6963BDQ Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI6963BDQ Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si6963BDQ Vishay Siliconix New Product www.vishay.com 2 Document Number: 72772 S-40439—Rev. A, 15-Mar-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −0.6 −1.4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V, TJ = 55_C −10 mA On-State Drain Currenta ID(on) VDS w −5 V, VGS = −4.5 V −20 A Drain Source On State Resistancea r VGS = −4.5 V, ID = −3.9 A 0.036 0.045 W Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −3.0 A 0.065 0.080 W Forward Transconductancea gfs VDS = −10 V, ID = −3.9 A 10 S Diode Forward Voltagea VSD IS = −1.0 A, VGS = 0 V −0.71 −1.1 V Dynamicb Total Gate Charge Qg 8.6 11 Gate-Source Charge Qgs VDS = −10 V, VGS = −4.5 V, ID = −3.9 A 1.2 nC Gate-Drain Charge Qgd 2.8 Gate Resistance Rg 7.0 W Turn-On Delay Time td(on) 33 50 Rise Time tr VDD = −10 V, RL = 10 W 57 90 Turn-Off Delay Time td(off) VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 65 100 ns Fall Time tf 40 60 Source-Drain Reverse Recovery Time trr IF = −1.0 A, di/dt = 100 A/ms 30 50 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 4.0 8.0 12.0 16.0 20.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 4.0 8.0 12.0 16.0 20.0 0.0 1.0 2.0 3.0 4.0 5.0 VGS = 5 thru 3 V TC = −55_C 125_C 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 2.0 V 2.5 V 1.5 V |
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