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BTB772NUJ3-P-T3-G Scheda tecnica(PDF) 4 Page - Cystech Electonics Corp. |
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BTB772NUJ3-P-T3-G Scheda tecnica(HTML) 4 Page - Cystech Electonics Corp. |
4 / 7 page CYStech Electronics Corp. Spec. No. : C631J3 Issued Date : 2017.10.06 Revised Date: Page:4/7 BTB772NUJ3 CYStek Product Specification Typical Characteristics(Cont.) Saturation Voltage vs Collector Current 1 10 100 1000 1 10 100 1000 10000 -IC, Collector Current(mA) VCE(SAT) @ IC=10IB 125°C 75°C 25°C 0°C -40°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 -IC, Collector Current(mA) VBE(SAT)@IC=10IB -40°C 0°C 25°C 75°C 125°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 -IC, Collector Current(mA) VBE(ON)@VCE=-2V -40°C 0°C 25°C 75°C 125°C Capacitance vs Reverse-Biased Voltage 1 10 100 1000 0.1 1 10 100 -VR, Reverse-Biased Voltage(V) Cob Cib Power Derating Curve 0 0.2 0.4 0.6 0.8 1 1.2 0 50 100 150 200 TA, Ambient Temperature(℃) Power Derating Curve 0 2 4 6 8 10 12 0 50 100 150 200 TC, CaseTemperature(℃) |
Codice articolo simile - BTB772NUJ3-P-T3-G |
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Descrizione simile - BTB772NUJ3-P-T3-G |
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