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MTB050N10KRQ8 Scheda tecnica(PDF) 5 Page - Cystech Electonics Corp.

Il numero della parte MTB050N10KRQ8
Spiegazioni elettronici  N-Channel Enhancement Mode Power MOSFET
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Produttore elettronici  CYSTEKEC [Cystech Electonics Corp.]
Homepage  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB050N10KRQ8 Scheda tecnica(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C059Q8
Issued Date : 2017.09.08
Revised Date :
Page No. : 5/9
MTB050N10KRQ8
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1
10
100
1000
10000
0
10
20304050
607080
90 100
VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
f=1MHz
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=250
μA
ID=1mA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
ID, Drain Current(A)
Pulsed
Ta=25°C
VDS=5V, 10V
Gate Charge Characteristics
0
2
4
6
8
10
04
8
12
16
2
Qg, Total Gate Charge(nC)
0
ID=4A
VDS=80V
VDS=20V
VDS=50V
Maximum Safe Operating Area
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
DC
10ms
100m
1ms
100
μs
1s
RDS(ON)
Limited
TA=25°C, Tj=150°C
VGS=10V,RθJA=125°C/W
Single Pulse
Maximum Drain Current vs Junction Temperature
0
0.5
1
1.5
2
2.5
3
3.5
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, Tj=150°C, VGS=10V,
RθJA=125°C, single pulse


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