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MTB040P04N3-0-T1-G Scheda tecnica(PDF) 1 Page - Cystech Electonics Corp. |
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MTB040P04N3-0-T1-G Scheda tecnica(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C967N3 Issued Date : 2017.11.02 Revised Date : Page No. : 1/ 9 MTB040P04N3 CYStek Product Specification P-Channel Enhancement Mode MOSFET MTB040P04N3 Features • Advanced trench process technology • Super high density cell design for extremely low on resistance • Reliable and rugged • Compact and low profile SOT-23 package • Pb-free lead plating and halogen-free package Equivalent Circuit Outline Ordering Information Device Package Shipping MTB040P04N3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel MTB040P04N3 SOT-23 G:Gate S:Source D:Drain BVDSS -40V ID@TA=25C, VGS=-10V -3.2A RDSON@VGS=-10V, ID=-2.5A 47mΩ (typ.) RDSON@VGS=-4.5V, ID=-2A 57mΩ (typ.) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name D G S |
Codice articolo simile - MTB040P04N3-0-T1-G |
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Descrizione simile - MTB040P04N3-0-T1-G |
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