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MTB030B03V8-0-T6-G Scheda tecnica(PDF) 5 Page - Cystech Electonics Corp. |
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MTB030B03V8-0-T6-G Scheda tecnica(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C386V8 Issued Date : 2017.10.12 Revised Date : 2017.10.16 Page No. : 5/ 9 MTB030B03V8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0 5 10 15 20 25 30 -VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) ID=-250 μA ID=-1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -ID, Drain Current(A) VDS=-10V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 0 4 8 1216 2024 Qg, Total Gate Charge(nC) VDS=-15V ID=-5A Maximum Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100μs RDS(ON) Limited TA=25°C, Tj=150°C, VGS=-10V, RθJA=84°C/W Single Pulse 1s Maximum Drain Current vs JunctionTemperature 0 1 2 3 4 5 6 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, VGS=-10V, RθJA=84°C/W |
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