MTB025P03KQ8-0-T3-G datasheet(3/9 Pages) CYSTEKEC

Il numero della parte	MTB025P03KQ8-0-T3-G

Spiegazioni elettronici	P-Channel Enhancement Mode Power MOSFET

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Produttore elettronici	CYSTEKEC [Cystech Electonics Corp.]

Homepage	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C736Q8

Issued Date : 2017.09.12

Revised Date : 2017.09.29

Page No. : 3/9

MTB025P03KQ8

CYStek Product Specification

Electrical Characteristics(Cont.) (Tj=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

td(ON) *1, 2

-

8

-

tr

*1, 2

-

17.2

-

td(OFF) *1, 2

-

34.2

-

tf *1, 2

-

9.8

-

ns

VDD=-15V, ID=-6A, VGS=-10V,

RG=1Ω

Qg *1, 2

-

16.3

-

Qgs *1, 2

-

2.5

-

Qgd *1, 2

-

3.9

-

nC

VDS=-15V, ID=-6A, VGS=-10V

Rg

-

6

-

f=1MHz

Ω

Source-Drain Diode

IS *1

-

-2.6

ISM *3

-

-10

A

VSD *1

-

-0.87

-1.2

V

IS=-6A, VGS=0V

trr

-

9.5

-

ns

Qrr

-

3.5

-

nC

IF=-6A, dIF/dt=100A/μs

Note : *1.Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

*2.Independent of operating temperature

*3.Pulse width limited by maximum junction temperature.

Recommended Soldering Footprint

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