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MTB010P04Q8-0-T3-G Scheda tecnica(PDF) 5 Page - Cystech Electonics Corp.

Il numero della parte MTB010P04Q8-0-T3-G
Spiegazioni elettronici  P-Channel Enhancement Mode Power MOSFET
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Produttore elettronici  CYSTEKEC [Cystech Electonics Corp.]
Homepage  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB010P04Q8-0-T3-G Scheda tecnica(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C030Q8
Issued Date : 2017.10.17
Revised Date : 2017.10.18
Page No. : 5/9
MTB010P04Q8
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
100
1000
10000
0
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250
μA
ID=-1mA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
-ID, Drain Current(A)
Pulsed
TA=25°C
VDS=-10V
VDS=-15V
Gate Charge Characteristics
0
2
4
6
8
10
0
10
2030
4050
60
7080
Qg, Total Gate Charge(nC)
ID=-15A
VDS=-32V
VDS=-20V
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-ID, Drain-Source Voltage(V)
DC
10ms
100ms
1ms
100
μs
1s
TA=25°C, Tj=150°C, VGS=-10V
RθJA=40°C/W, Single Pulse
RDS(ON)
Limited
Maximum Drain Current vs Junction Temperature
0
2
4
6
8
10
12
14
16
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, VGS=-10V, RθJA=40°C/W
single pulse


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