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EC733313 Scheda tecnica(PDF) 1 Page - E-CMOS Corporation

Il numero della parte EC733313
Spiegazioni elettronici  -30V, -8A P-Channel MOSFET
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Produttore elettronici  E-CMOS [E-CMOS Corporation]
Homepage  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC733313 Scheda tecnica(HTML) 1 Page - E-CMOS Corporation

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EC733313
-30V、
、-8A P-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 4
4K25N-Rev.F001
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±25
V
ID(25
)
-8
A
ID(70
)
-6
A
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
-45
A
Maximum Power Dissipation
PD
3.1
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
Description
The EC733313 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
Features and Benefits:
◆ VDS = -30V,ID =-8A
RDS(ON) < 25m
@ VGS=-4.5V
RDS(ON) < 14m
@ VGS=-10V
◆ High Power and current handing capability
◆ Lead free product is acquired
◆ Surface Mount Package
Application
PWM applications
Load switch
Power management
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Thermal Resistance


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