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EC733313 Scheda tecnica(PDF) 1 Page - E-CMOS Corporation |
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EC733313 Scheda tecnica(HTML) 1 Page - E-CMOS Corporation |
1 / 4 page EC733313 -30V、 、 、 、-8A P-Channel MOSFET E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 4 4K25N-Rev.F001 Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V ID(25 ) -8 A ID(70 ) -6 A Drain Current-Continuous@ Current-Pulsed (Note 1) IDM -45 A Maximum Power Dissipation PD 3.1 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 Description The EC733313 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Features and Benefits: ◆ VDS = -30V,ID =-8A RDS(ON) < 25m @ VGS=-4.5V RDS(ON) < 14m @ VGS=-10V ◆ High Power and current handing capability ◆ Lead free product is acquired ◆ Surface Mount Package Application ◆ PWM applications ◆ Load switch ◆ Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Thermal Resistance |
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