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EC732302 Scheda tecnica(PDF) 1 Page - E-CMOS Corporation |
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EC732302 Scheda tecnica(HTML) 1 Page - E-CMOS Corporation |
1 / 6 page EC732302 20V、2.4A N-Channel MOSFET E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 6 5E19N-Rev.F001 Description The EC732302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Features and Benefits: ◆ VDS = 20V,ID =2.4A RDS(ON) <115 mΩ @ VGS=2.5V RDS(ON) < 60 mΩ @ VGS=4.5V ◆ High Power and current handing capability ◆ Lead free product is acquired ◆ Surface Mount Package Application ● Battery protection ● Load switch ● Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Thermal Resistance Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous@ Current-Pulsed (Note 1) ID (25℃) 2.4 A ID (70℃) 1.7 A IDM 10 A Maximum Power Dissipation PD 0.9 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Resistance, Junction-Ambient (Note 2) RθJA 140 ℃/W |
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