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3N65 Scheda tecnica(PDF) 3 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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3N65 Scheda tecnica(HTML) 3 Page - Zibo Seno Electronic Engineering Co.,Ltd |
3 / 7 page Power MOSFET 3N60 3N65 3 of 7 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 3N60 3N65 ELECTRICAL CHARACTERISTICS (T J =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 600 V Drain-Source Breakdown Voltage 3N65 BVDSS VGS = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA Forward VGS = 30V, VDS = 0V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/T △ J ID = 250 μA, Referenced to 25°C 0.6 V/° С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1.5A 2.8 3.6 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 350 450 pF Output Capacitance COSS 50 65 pF Reverse Transfer Capacitance CRSS VDS =25V, VGS =0V,f =1MHz 5.5 7.5 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) 35 50 ns Turn-On Rise Time tR 60 70 ns Turn-Off Delay Time tD(OFF) 100 150 ns Turn-Off Fall Time tF VDD =30V, I D =3.0A, RG=25Ω (Note 1, 2) 65 75 ns Total Gate Charge QG 18.5 23 nC Gate-Source Charge QGS 5.2 nC Gate-Drain Charge QGD VDS=50V, VGS=10V, ID=3.0A (Note 1, 2) 4.9 nC DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 3.0 A 1.4 V Continuous Drain-Source Current ISD 3.0 A Pulsed Drain-Source Current ISM 12 A Reverse Recovery Time tRR 210 ns Reverse Recovery Charge QRR VGS = 0 V, ISD = 3.0A, di/dt = 100 A/ μs (Note1) 1.2 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature 3N60 Alldatasheet |
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