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BC184C Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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BC184C Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Notes: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150degrees C. Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 500 mA PC Collector Dissipation (Ta=25°C) (Note 2, 3) 350 mW TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Voltage IC = 10µA45 V BVCEO Collector-Emitter Voltage IC = 2mA 30 V BVEBO Emitter-Base Voltage IE = 10µA5 V ICBO Collector Cut-off Current VCB = 30V 15 nA IEBO Emitter Cut-off Current VEB = 4V 15 nA hFE DC Current Gain VCE = 5V, IC = 10µA VCE = 5V, IC = 2mA VCE = 5V, IC = 100mA 100 250 130 800 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA 0.6 0.25 V VBE(sat) Base-Emitter Saturation Voltage IC = 100mA, IB = 5mA 1.2 V VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 2mA 0.55 0.7 V C OB Output Capacitance VCE = 10V, f = 1MHz 5 pF fT Current gain Bandwidth Product VCE = 5V, IC = 10mA f = 100MHz 150 MHz hFE Small Signal Current Gain VCE = 5V, IC = 2mA f = 1KHz 240 900 NF Noise Figure VCE = 5V, IC = 200mA R G = 2KΩ, f = 30Hz ~ 15KHz VCE = 5V, IC = 200µA, f = 1KHz 4 4 dB BC184C Silicon NPN Small Signal Transistor (Note 1) •BVCEO = 30V (Min.) •hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA 1. Collector 2. Base 3. Emitter TO-92 1 |
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