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SI7501DN Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI7501DN Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
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2 / 8 page  Si7501DN Vishay Siliconix www.vishay.com 2 Document Number: 72173 S-32419—Rev. B, 24-Nov-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA P-Ch −1.0 −3 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA N-Ch 1.0 3 V Gate Body Leakage IGSS VDS = 0 V, VGS = "25 V P-Ch "200 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V N-Ch "100 nA VDS = −30 V, VGS = 0 V P-Ch −1 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V N-Ch 1 mA Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V, TJ = 55_C P-Ch −5 mA VDS = 30 V, VGS = 0 V, TJ = 55_C N-Ch 5 On State Drain Currenta ID( ) VDS w −5 V, VGS = −10 V P-Ch −25 A On-State Drain Currenta ID(on) VDS p 5 V, VGS = 10 V N-Ch 25 A VGS = −10 V, ID = −6.4 A P-Ch 0.041 0.051 Drain Source On State Resistancea rDS( ) VGS = 10 V, ID = 7.7 A N-Ch 0.028 0.035 W Drain-Source On-State Resistancea rDS(on) VGS = −6 V, ID = −5.3 A P-Ch 0.055 0.075 W VGS = 4.5 V, ID = 6.5 A N-Ch 0.040 0.050 Forward Transconductancea gf VDS = −15 V, ID = −6.4 A P-Ch 13 S Forward Transconductancea gfs VDS = 15 V, ID = 7.7 A N-Ch 15 S Diode Forward Voltagea VSD IS = −1.7 A, VGS = 0 V P-Ch −0.80 −1.2 V Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V N-Ch 0.80 1.2 V Dynamicb Total Gate Charge Qg P-Ch 12.5 19 Total Gate Charge Qg P-Channel N-Ch 9 14 Gate Source Charge Q P-Channel VDS = −15 V, VGS = −10 V, ID = −6.4 A P-Ch 2.5 nC Gate-Source Charge Qgs N-Channel V 15 V V 10 V I 77 A N-Ch 2 nC Gate Drain Charge Q d VDS = 15 V, VGS = 10 V, ID = 7.7 A P-Ch 3.6 Gate-Drain Charge Qgd N-Ch 1.3 Gate Resistance R P-Ch 9 W Gate Resistance Rg N-Ch 3 W Turn On Delay Time td( ) P-Ch 10 15 Turn-On Delay Time td(on) N-Ch 10 15 Rise Time t P-Channel VDD = −15 V, RL = 5 W P-Ch 20 30 Rise Time tr VDD = −15 V, RL = 5 W ID ^ −3 A, VGEN = −10 V, RG = 1 W N-Ch 15 25 Turn Off Delay Time td( ff) N-Channel V 15 V R 5 W P-Ch 25 40 ns Turn-Off Delay Time td(off) VDD = 15 V, RL = 5 W ID ^ 3 A, VGEN = 10 V, RG = 1 W N-Ch 20 30 ns Fall Time tf ID ^ 3 A, VGEN = 10 V, RG = 1 W P-Ch 30 45 Fall Time tf N-Ch 10 15 Source-Drain t IF = −1.7 A, di/dt = 100 A/ms P-Ch 25 50 Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/ms N-Ch 20 40 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. |
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