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DTA114TE Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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DTA114TE Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page DTA114TE / DTA114TUA / DTA114TCA / DTA114TSA PNP Digital Transistors (Built-in Resistors) Elektronische Bauelemente 11-Aug-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. Only the on/off conditions need to be set for operation, making device design easy. EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS at (TA = 25°C unless otherwise noted) Parameter Symbol LIMITS(DTA114T□) Unit E UA CA SA Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 mA Collector Current-Continuous IC -100 Collector Dissipation PC 150 200 300 mW Junction & Storage temperature TJ, TSTG 150, -55~150 ℃ ELECTRICAL CHARACTERISTICS at (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO -50 - - V IC= -50A, IE= 0 Collector-emitter breakdown voltage V(BR)CEO -50 - - IC= -1mA, IB= 0 Emitter-base breakdown voltage V(BR)EBO -5 - - V IE= -50A, IC=0 Collector cut-off current ICBO - - -0.5 A VCB= -50V, IE=0 Emitter cut-off current IEBO - - -0.5 A VEB= -4V, IC=0 DC current gain hFE 100 250 600 VCE= -5V, IC= -1mA Collector-emitter saturation voltage VCE(sat) - - -0.3 V IC= -10mA, IB= -1mA Transition frequency fT - 250 - MHz VCE= -10V, IC= -5mA, f= 100MHz Input resistor R1 7 10 13 kΩ DTA114TE (SOT-523) Addreviated symbol:94 DTA114TUA (SOT-323) Addreviated symbol:94 DTA114TSA (TO-92S) DTA114TCA (SOT-23) Addreviated symbol:94 |
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