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TSAL6400 Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte TSAL6400
Spiegazioni elettronici  High Power Infrared Emitting Diode
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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TSAL6400
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 13-Mar-14
1
Document Number: 81011
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
DESCRIPTION
TSAL6400 is an infrared, 940 nm emitting diode in GaAlAs
multi quantum well (MQW) technology with high radiant
power and high speed
molded in a blue-gray plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength:
λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
ϕ = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared
remote
control
units
with
high
power
requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
TSAL6400
50
± 25
940
15
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TSAL6400
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1.5
A
Power dissipation
PV
160
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
Soldering temperature
t
≤ 5 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm soldered on PCB
RthJA
230
K/W


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