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AM3431P Scheda tecnica(PDF) 1 Page - Analog Power |
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AM3431P Scheda tecnica(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM3431P P-Channel 30-V (D-S) MOSFET VDS (V) ID (A) -7.5 -6.1 Symbol Limit Units VDS -30 VGS ±20 TA=25°C -7.5 TA=70°C -6.1 IDM -30 IS -2.7 A TA=25°C 2 TA=70°C 1.3 TJ, Tstg -55 to 150 °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Gate-Source Voltage PRODUCT SUMMARY -30 rDS(on) (mΩ) 24 @ VGS = -10V 36 @ VGS = -4.5V Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Continuous Drain Current a Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Load Switches • DC/DC Conversion • Motor Drives TSOP-6 © Preliminary 1 Publication Order Number: DS_AM3431P_1A |
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