BC556 datasheet(4/12 Pages) PHILIPS

Il numero della parte	BC556

Spiegazioni elettronici	PNP general purpose transistors

Download	12 Pages

Scroll/Zoom	100%

Produttore elettronici	PHILIPS [NXP Semiconductors]

Homepage	http://www.nxp.com

Logo

4 / 12 page

1997 Mar 27

4

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BC556; BC557; BC558

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. VBEsat decreases by about −1.7 mV/K with increasing temperature.

2. VBE decreases by about −2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−1

−15

nA

IE = 0; VCB = −30 V; Tj = 150 °C

−−−4

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100 nA

hFE

DC current gain

IC = −2 mA; VCE = −5V;

see Figs 2, 3 and 4

BC556

125

−

475

BC557; BC558

125

−

800

BC556A; BC557A; BC558A

125

−

250

BC556B; BC557B; BC558B

220

−

475

BC557C; BC558C

420

−

800

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA

−−60

−300 mV

IC = −100 mA; IB = −5mA

−−180 −650 mV

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA; note 1

−−750 −

mV

IC = −100 mA; IB = −5 mA; note 1

−−930 −

mV

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V; note 2

−600 −650 −750 mV

IC = −10 mA; VCE = −5 V; note 2

−−−820 mV

Cc

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

3

−

pF

Ce

emitter capacitance

IC =ic = 0; VEB = −0.5 V; f = 1 MHz

−

10

−

pF

fT

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 100

−−

MHz

F

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−

210

dB

Codice articolo simile - BC556

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Olitech Electronics Co....	BC556	791Kb / 4P	FEATURES
Motorola, Inc	BC556	220Kb / 6P	Amplifier Transistors
Fairchild Semiconductor	BC556	43Kb / 4P	Switching and Amplifier
Micro Commercial Compon...	BC556	294Kb / 5P	PNP Silicon Amplifier Transistor 625mW
Foshan Blue Rocket Elec...	BC556	804Kb / 6P	Silicon PNP transistor in a TO-92(R) Plastic Package

More results

Descrizione simile - BC556

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Weitron Technology	SS8550LT1	404Kb / 4P	PNP General Purpose Transistors
Weitron Technology	S9012	1Mb / 4P	PNP General Purpose Transistors
NXP Semiconductors	BCX71	43Kb / 8P	PNP general purpose transistors 1999 Apr 20
	BC859	46Kb / 8P	PNP general purpose transistors 1999 May 28
	BCX17	42Kb / 8P	PNP general purpose transistors 1999 May 31
Weitron Technology	A1015	720Kb / 4P	PNP General Purpose Transistors
Weitron Technology	2SA1036K	209Kb / 4P	PNP General Purpose Transistors
NXP Semiconductors	BC857BW115	163Kb / 10P	PNP general purpose transistors 2002 Feb 04
NXP Semiconductors	BCW69	119Kb / 6P	PNP general purpose transistors 2004 Feb 06
First Components Intern...	2N3905	77Kb / 2P	PNP General Purpose Transistors
Weitron Technology	KTA1505	411Kb / 3P	PNP General Purpose Transistors

More results

BC556 Scheda tecnica(PDF) 4 Page - NXP Semiconductors

BC556 Scheda tecnica(HTML) 4 Page - NXP Semiconductors

Codice articolo simile - BC556

Descrizione simile - BC556

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Scheda tecnica Scarica

Link URL