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BC807W Scheda tecnica(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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BC807W Scheda tecnica(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors BC807W TRANSISTOR (PNP) FEATURES Ldeally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 ~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage VCBO IC=-10μA,IE=0 -50 V Collector-emitter breakdown voltage VCEO IC=-10mA,IB =0 -45 V Emitter-base breakdown voltage VEBO IE=-1μA,IC=0 -5 V Collector cut-off current ICBO VCB=-20 V , IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5 V , IC=0 -0.1 μA hFE(1) VCE= -1V,IC= -100mA 100 600 DC current gain hFE(2) VCE= -1V,IC= -500mA 40 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50 mA -0.7 V Base-emitter voltage VBE(on) VCE= -1V,IC= -500mA -1.2 V Transition frequency fT VCE=-5 V, IC= -10mA f=100MHz 80 MHz Collector output capacitance Cob VCB=-10V,f=1MHz 10 pF SOT-323 1. BASE 2. EMITTER 3. COLLECTOR CLASSIFICATION of hFE (1) Rank BC807-16W BC807-25W BC807-40W Range 100-250 160-400 250-600 Marking 5A 5B 5C RθJA Thermal Resistance from Junction to Ambient 6 ℃/W www.cj-elec.com 1 A,Jun,2014 www.cj-elec.com F,Jun,2016 JC T |
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