KTA1298 datasheet(2/6 Pages) FOSHAN

Il numero della parte	KTA1298

Spiegazioni elettronici	Silicon PNP transistor in a SOT-23 Plastic Package

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Produttore elettronici	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Homepage	http://www.fsbrec.com/

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2 / 6 page

KTA1298

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-35

V

Collector to Emitter Voltage

VCEO

-30

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current

IC

-800

mA

Base Current

IB

-160

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO IC=-10mA

IB=0

-30

V

Collector to Emitter Breakdown

Voltage

VEBO

IE=-1.0mA IC=0

-5.0

V

Collector Cut-Off Current

ICBO

VCB=-30V IE=0

-0.1

μA

Emitter Cut-Off Current

IEBO

VEB=-5.0V IC=0

-0.1

μA

DC Current Gain

hFE(1)

VCE=-1.0V IC=-100mA

100

320

hFE(2)

VCE=-1.0V IC=-800mA

40

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=-500mA IB=-20mA

-0.4

V

Base to Emitter Voltage

VBE

VCE=-1.0V IC=-10mA

-0.5

-0.8

V

Transition Frequency

fT

VCE=-5.0V IC=-10mA

120

MHz

Collector Output Capacitance

Cob

VCB=-10V

IE=0

f=1.0MHz

13

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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