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MTB095N10KRL3 Scheda tecnica(PDF) 1 Page - Cystech Electonics Corp. |
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MTB095N10KRL3 Scheda tecnica(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : 2017.07.20 Page No. : 1/9 MTB095N10KRL3 Preliminary CYStek Product Specification N-Channel Enhancement Mode MOSFET MTB095N10KRL3 BVDSS 100V Features ID @ VGS=10V, TA=25°C 3.3A RDSON@VGS=10V, ID=2A 107mΩ (typ.) 127mΩ (typ.) RDSON@VGS=4.5V, ID=2A • Low Gate Charge • Simple Drive Requirement • ESD protected gate • Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTB095N10KRL3 SOT-223 D S G:Gate D:Drain S:Source D G Ordering Information Device Package Shipping SOT-223 MTB095N10KRL3-0-T3-G 2500 pcs / Tape & Reel (Pb-free lead plating & Halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name |
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Descrizione simile - MTB095N10KRL3_17 |
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