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BTA04F Scheda tecnica(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
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BTA04F Scheda tecnica(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
2 / 6 page BTA04F Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Repetitive peak off-state voltages(Tj=110℃) VDRM/VRRM 600 V RMS on-state current(TC=90℃) IT(RMS) 4.0 A Non-repetitive peak on-state current ITSM(t=8.3ms) 42 A Non-repetitive peak on-state current ITSM(t=10ms) 40 A I 2 t for fusing I 2t(t=10ms) 8.0 A 2s Repetitive rate of rise of on-state current after triggering(Repetitive F=50Hz) dI/dt 10 A/μs Repetitive rate of rise of on-state current after triggering(Non repetitive) 50 Junction Temperature Tj -40~110 ℃ Storage Temperature Range Tstg -40~150 ℃ Junction to ambient Rth(j-a) 60 /W ℃ Junction to case for DC Rth(j-c) 4.4 /W ℃ Junction to case for DC(AC F=50Hz) 3.3 /W ℃ 符号 Symbol 测试条件 Test Conditions 信号区 Quadrant BTA04F 单位 Unit T D S A IGT VD=12V RL=33Ω Tj=25℃ I-II-III Max. 5.0 5.0 10 10 mA IV Max. 5.0 10 10 25 VGT VD=12V RL=33Ω Tj=25℃ I-II-III Max. 1.5 V IV Max. 1.75 VGD VD=VDRM RL=3.3KΩ Tj=110℃ I-II-III-IV Min. 0.2 V tgt VD=VDRM IG=40mA Dig/dt=0.5A/μs Tj=25℃ I-II-III-IV Typ. 2.0 μs IL IG=1.2IGT Tj=25℃ I-III-IV Typ. 10 10 20 20 mA II 20 20 40 40 IH * IT=100mA Gate open Tj=25℃ Max. 15 15 25 25 mA VTM * ITM=5.5A tp=380μs Tj=25℃ Max. 1.65 V IDRM VDRM rated Tj=25℃ Max. 0.01 mA IRRM VRRM rated Tj=110℃ Max. 0.75 mA (dV/dt) * Linear slope up to VD=67% VDRM gate openTj=110℃ Typ. 10 10 - - V/μs Min. - - 10 10 (dI/dt)c * (Di/dt)c=1.8A/ms Tj=110℃ Typ. 1.0 1.0 5.0 5.0 A/μs *For either polarity of electrode T2 voltage with reference to electrode T1 GATE CHARACTERISTICS (maximum values) PG(AV)=1W PGM=40W(tp=20μs) IGM=4A(tp=20μs) VGM=16V(tp=20μs) 极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics(Ta=25℃) |
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