2SD1936M datasheet(2/6 Pages) FOSHAN

Il numero della parte	2SD1936M

Spiegazioni elettronici	Silicon NPN transistor in a SOT-23 Plastic Package

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Produttore elettronici	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Homepage	http://www.fsbrec.com/

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2 / 6 page

2SD1936M

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

15

V

Collector to Emitter Voltage

VCEO

15

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current

IC

0.8

A

Collector Current(Pulse)

ICP

3.0

A

Collector Power Dissipation

PC

250

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector-Base Breakdown

Voltage

VCBO

IC=10μA

IE=0

15

V

Collector-Emitter Breakdown

Voltage

VCEO

IC=1.0mA

RBE=∞

15

V

Emitter-Base Breakdown Voltage

VEBO

IE=10μA

IC=0

5.0

V

Collector Cut-Off Current

ICBO

VCB=12V

IE=0

0.1

μA

Emitter Base Cut-Off Current

IEBO

VEB=4.0V

Ic=0

0.1

μA

hFE(1)

VCE=2.0V

Ic=50mA

140

800

DC Current Gain

hFE(2)

VCE=2.0V

Ic=800mA

80

VCE(sat)(1) Ic=5.0mA

IB=0.5mA

0.01

0.025

V

Collector to Emitter Saturation

Voltage

VCE(sat)(2) Ic=400mA

IB=20mA

0.1

0.2

V

Base to Emitter Saturation Voltage VBE(sat)

Ic=400mA

IB=20mA

0.9

1.2

V

Transition Frequency

fT

VCE=2.0V

IC=50mA

200

MHz

Collector Output Capacitance

Cob

VCB=10V

IE=0

f=1.0MHz

10

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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