KTA1666 datasheet(2/6 Pages) FOSHAN

Il numero della parte	KTA1666

Spiegazioni elettronici	Silicon PNP transistor in a SOT-89 Plastic Package

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Produttore elettronici	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Homepage	http://www.fsbrec.com/

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2 / 6 page

KTA1666

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-50

V

Collector to Emitter Voltage

VCEO

-50

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current - Continuous

IC

-2.0

A

Collector Base – Continuous

IB

-0.4

A

Collector Power Dissipation

PC

500

mW

Collector Power Dissipation*

*PC

1.0

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

*KTA1666 mounted on ceramic substrate(250mm2×0.8t)

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=-50V

IE=0

-0.1

μA

Emitter Base Cut-Off Current

IEBO

VEB=-5.0V

IC=0

-0.1

μA

Collector to Emitter Breakdown

Voltage

VCEO

IC=-10mA

IB=0

-50

V

DC Current Gain

hFE(1)

VCE=-2.0V

IC=-0.5A

70

240

hFE(2)

VCE=-2.0V

IC=-1.5A

40

Collector to Emitter Saturation

Voltage

VCE(sat) IC=-1.0A

IB=-0.05A

-0.5

V

Base to Emitter Saturation Voltage

VBE(sat) IC=-1.0A

IB=-0.05A

-1.2

V

Transition Frequency

fT

VCE=-2.0V

IC=-0.5A

120

MHz

Collector Output Capacitance

Cob

VCB=-10V

IE=0

f=1MHz

40

pF

Turn-On Time

ton

-IB1=IB2=0.05A

0.1

μS

Storage Time

tstg

1.0

μS

Fall Time

tf

0.1

μS

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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