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IRF7425 Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF7425 Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 9 page Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -15 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -12 A IDM Pulsed Drain Current -60 PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 20 mW/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 11/20/01 www.irf.com 1 IRF7425 HEXFET® Power MOSFET These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Description Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel PD- 94022A Parameter Max. Units RθJA Maximum Junction-to-Ambient 50 °C/W Thermal Resistance Absolute Maximum Ratings W Top View 8 1 2 3 4 5 6 7 D D D G S A D S S VDSS RDS(on) max (mΩ) Ω) Ω) Ω) Ω) ID 20V 8.2@VGS = -4.5V -15A 13@VGS = -2.5V -13A SO-8 |
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