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TPD4E02B04QDQARQ1 Scheda tecnica(PDF) 4 Page - Texas Instruments |
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TPD4E02B04QDQARQ1 Scheda tecnica(HTML) 4 Page - Texas Instruments |
4 / 22 page 4 TPD4E02B04-Q1 SLVSDZ2 – JUNE 2017 www.ti.com Product Folder Links: TPD4E02B04-Q1 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Electrical fast transient IEC 61000-4-5 (5/50 ns) at 25°C 80 A Peak pulse IEC 61000-4-5 power (tp - 8/20 µs) at 25°C 17 W IEC 61000-4-5 Ccurrent (tp - 8/20 µs) at 25°C 2 A TA Operating free-air temperature –40 125 °C Tstg Storage temperature –65 155 °C (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.2 ESD Ratings—AEC Specification VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2500 V Charged-device model (CDM), per AEC Q100-011 ±1000 6.3 ESD Ratings—IEC Specification VALUE UNIT V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±12000 V IEC 61000-4-2 air-gap discharge ±15000 (1) VOUT was tested on a PCB with input and output bypassing capacitors of 0.1 µF and 120 µF, respectively. 6.4 ESD Ratings—ISO Specification VALUE UNIT V(ESD) Electrostatic discharge ISO 10605 330 pF, 330 Ω, IO Contact discharge(1) ±8000 V Air-gap discharge(1) ±15000 6.5 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VIO Input pin voltage –3.6 3.6 V TA Operating free-air temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.6 Thermal Information THERMAL METRIC(1) TPD4E02B04-Q1 UNIT DQA (USON) 10 PINS RθJA Junction-to-ambient thermal resistance 348.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 214.1 °C/W RθJB Junction-to-board thermal resistance 270.7 °C/W ψJT Junction-to-top characterization parameter 81.7 °C/W ψJB Junction-to-board characterization parameter 270.7 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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