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AD161 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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AD161 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor AD161 DESCRIPTION · Wide Area of Safe Operation · DC Current Gain- : hFE=50-350@IC= 0.5A · Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max)@ IC= 3A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general-purpose power switch and amplifier, consumer and industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.52 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 4 W TJ Junction Temperature 90 ℃ Tstg Storage Temperature -55~200 ℃ |
Codice articolo simile - AD161 |
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Descrizione simile - AD161 |
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