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HLMP-EL10-UX000 Scheda tecnica(PDF) 7 Page - Agilent(Hewlett-Packard)

Il numero della parte HLMP-EL10-UX000
Spiegazioni elettronici  T-13/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps
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Produttore elettronici  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
Logo HP - Agilent(Hewlett-Packard)

HLMP-EL10-UX000 Scheda tecnica(HTML) 7 Page - Agilent(Hewlett-Packard)

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Electrical/Optical Characteristics at TA = 25°C
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Forward Voltage
IF = 20 mA
Amber (
λ
d = 590 nm)
2.02
Orange (
λ
d = 605 nm)
VF
1.98
2.4
V
Red-Orange (
λ
d = 615 nm)
1.94
Red (
λ
d = 626 nm)
1.90
Reverse Voltage
VR
520
V
IF = 100 µA
Peak Wavelength:
Peak of Wavelength of
Amber (
λ
d = 590 nm)
592
Spectral Distribution
Orange (
λ
d = 605 nm)
λ
PEAK
609
nm
at IF = 20 mA
Red-Orange (
λ
d = 615 nm)
621
Red (
λ
d = 626 nm)
635
Spectral Halfwidth
∆λ
1/2
17
nm
Wavelength Width at
Spectral Distribution
1/2 Power Point at
IF = 20 mA
Speed of Response
τ
s
20
ns
Exponential Time
Constant, e-t/τ
Capacitance
C
40
pF
VF = 0, f = 1 MHz
Thermal Resistance
R
θ
J-PIN
240
°C/W
LED Junction-to-Cathode
Lead
Luminous Efficacy[1]
Emitted Luminous
Amber (
λ
d = 590 nm)
480
Power/Emitted Radiant
Orange (
λ
d = 605 nm)
η
v
370
lm/W
Power
Red-Orange (
λ
d = 615 nm)
260
Red (
λ
d = 626 nm)
150
Note:
1. The radiant intensity, Ie, in watts per steradian, may be found from the equation Ie = Ivv, where Iv is the luminous intensity in
candelas and
η
v is the luminous efficacy in lumens/watt.
Absolute Maximum Ratings at TA = 25°C
DC Forward Current[1,2,3] ............................................................ 50 mA
Peak Pulsed Forward Current[2,3] .............................................. 100 mA
Average Forward Current[3] ......................................................... 30 mA
Reverse Voltage (IR = 100 µA) ......................................................... 5 V
LED Junction Temperature .......................................................... 130
°C
Operating Temperature .............................................. -40
°C to +100°C
Storage Temperature .................................................. -40
°C to +120°C
Dip/Drag Soldering Temperature ........................... 260
°C for 6 seconds
Through-the-Wave Preheat Temperature ...................................... 145
°C
Through-the-Wave Solder Temperature ................. 245
°C for 3 seconds
[1.59 mm (0.060 in.) below seating plane]
Notes:
1. Derate linearly as shown in Figure 4.
2. For long term performance with minimal light output degradation, drive currents
between 10 mA and 30 mA are recommended. For more information on recommended
drive conditions, please refer to HP Application Brief I-024 (5966-3087E).
3. Please contact your Hewlett-Packard sales representative about operating currents
below 10 mA.
s


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