© 2016 Littelfuse, Inc.

Specifications are subject to change without notice.

Revised: 10/05/16

SiC Schottky Diode

LFUSCD10120A, 1200 V, 10 A,TO-220 2-lead

LFUSCD10120A

Features

Applications

• Positive temperature

coefficient for safe

operation and ease of

paralleling

operating junction

temperature

• Enhanced surge capability

• Extremely fast,

temperature-independent

switching behavior

• Dramatically reduced

switching losses

compared to Si bipolar

diodes

• Boost diodes in power

factor correction

• Switch-mode power

supplies

• Uninterruptible power

supplies

• Solar inverters

• Industrial motor drives

Maximum Ratings

Characteristics

Symbol

Conditions

Value

Unit

DC Blocking Voltage

V

R

-

1200

V

Repetitive Peak Reverse Voltage, Tj

= 25 °C

V

RRM

1200

V

Maximum DC Forward Current

I

F

T

10

A

Non-Repetitive Forward Surge

Current

I

FSM

T

80

A

Power Dissipation

P

Tot

T

136

W

T

30

Maximum Operating Junction

Temperature

T

J,MAX

175

°C

Storage Temperature

T

STG

-55 to 175

°C

Soldering Temperatures,

Wavesoldering Only Allowed at

Leads

T

sold

1.6 mm from case for 10s

260

°C

Circuit Diagram

Description

The LFUSCD series of silicon carbide (SiC) Schottky di-

odes has near-zero recovery current, high surge capability,

The diode series is ideal for applications where improve-

ments in efficiency, reliability, and thermal management

are desired.

Case

12

2

1

1