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SI3454ADV-T1-E3 Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI3454ADV-T1-E3 Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si3454ADV Vishay Siliconix Document Number: 71108 S-40424—Rev. C, 15-Mar-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 100 200 300 400 500 600 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 −50 −25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 2468 10 0.00 0.05 0.10 0.15 0.20 04 8 12 16 20 VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 15 V ID = 4.5 A ID − Drain Current (A) VGS = 10 V ID = 4.5 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0.05 0.10 0.15 0.20 0 2468 10 TJ = 150_C ID = 4.5 A 20 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) VGS = 4.5 V TJ = 25_C |
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