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SI5406DC Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI5406DC Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si5406DC Vishay Siliconix www.vishay.com 2-2 Document Number: 71657 S-21251—Rev. B, 05-Aug-02 SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS =VGS,ID =1.2 mA 0.6 V Gate-Body Leakage IGSS VDS =0 V, VGS = 8V 100 nA Zero Gate Voltage Drain Current IDSS VDS =9.6 V, VGS =0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS =9.6 V, VGS =0 V, TJ =85_C 5 mA On-State Drain Currenta ID(on) VDS ≥ 5V,VGS =4.5 V 20 A Drain-Source On-State Resistancea rDS(on) VGS =4.5 V, ID =6.9 A 0.017 0.020 Ω Drain-Source On-State Resistancea rDS(on) VGS =2.5 V, ID =2 A 0.021 0.025 Ω Forward Transconductancea gfs VDS =10 V,ID =6.9 A 30 S Diode Forward Voltagea VSD IS =1.1 A, VGS =0 V 0.7 1.2 V Dynamicb Total Gate Charge Qg 13.7 20 Gate-Source Charge Qgs VDS =6 V, VGS =4.5 V, ID =6.9 A 2.3 nC Gate-Drain Charge Qgd 4.1 Turn-On Delay Time td(on) 17 25 Rise Time tr VDD =6 V,RL =6 Ω 46 70 Turn-Off Delay Time td(off) VDD = 6 V, RL = 6 Ω ID ≅ 1A,VGEN =4.5 V, RG =6 Ω 54 80 ns Fall Time tf 29 45 Source-Drain Reverse Recovery Time trr IF = 1.1 A, di/dt = 100 A/ms 35 70 Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS =5 thru 2.5 V TC = 125_C --55_C 2V 25_C Output Characteristics Transfer Characteristics VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) 1.5 V 1V |
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