ACE1060B datasheet(1/6 Pages) ACE

Il numero della parte	ACE1060B

Spiegazioni elettronici	N-Channel Super Trench Power MOSFET

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Produttore elettronici	ACE [ACE Technology Co., LTD.]

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ACE1060B

N-Channel Super Trench Power MOSFET

VER 1.2

1

Description

ACE1060B uses Super Trench technology that is uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and switching power losses are minimized due to an

extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and

synchronous rectification.

Features



VDS=100V, ID=60A



RDS(ON)1@VGS=10V, TYP 7.2mΩ

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)*AC

TA=25℃

ID

60

A

TA=100℃

52

Drain Current (Pulsed)*B

IDM

240

A

Power Dissipation

TA=25℃

PD

105

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Packaging Type

DFN5*6-EP

Ordering information

ACE1060B XX + H

PN: DFN5*6-EP

Pb - free

Halogen - free

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