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STD4NC50 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STD4NC50 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 9 page 3/9 STD4NC50/-1 Thermal Impedence ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 250V, ID = 1.9 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 11.5 ns tr Rise Time 9 ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400V, ID = 3.7 A, VGS = 10V 18 6 8 25 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 400V, ID = 3.7 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 7 6 13 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 3.7 A ISDM (2) Source-drain Current (pulsed) 14.8 A VSD (1) Forward On Voltage ISD = 3.7A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3.7A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 380 2.3 12 ns µC A Safe Operating Area |
Codice articolo simile - STD4NC50_07 |
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Descrizione simile - STD4NC50_07 |
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