SI4896DY datasheet(3/5 Pages) VISHAY

Il numero della parte	SI4896DY

Spiegazioni elettronici	N-Channel 80-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Si4896DY

Vishay Siliconix

Document Number: 71300

S-03950—Rev. B, 26-May-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

500

1000

1500

2000

2500

3000

0

20406080

0.0

0.5

1.0

1.5

2.0

2.5

- 50

- 25

0

25

50

75

100

125

150

0

4

8

12

16

20

0

15304560

0.00

0.01

0.02

0.03

0.04

0

10203040

50

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 40 V

ID = 10 A

ID - Drain Current (A)

VGS = 10 V

ID = 10 A

Gate Charge

On-Resistance vs. Drain Current

Qg - Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0.02

0.04

0.06

0.08

0

2468

10

ID = 10 A

100

10

0.01

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

VGS = 6 V

VGS = 10 V

1

0.1

TJ = 150_C

TJ = 25_C

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