SI4392DY-T1-E3 datasheet(2/5 Pages) VISHAY

Il numero della parte	SI4392DY-T1-E3

Spiegazioni elettronici	N-Channel Reduced Qg, Fast Switching WFET

Download	5 Pages

Scroll/Zoom	100%

Produttore elettronici	VISHAY [Vishay Siliconix]

Homepage	http://www.vishay.com

Logo

2 / 5 page

Si4392DY

Vishay Siliconix

www.vishay.com

2

Document Number: 72151

S-41427—Rev. D, 26-Jul-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.0

3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

30

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 12.5 A

0.008

0.00975

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 10.0 A

0.011

0.01375

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 12.5 A

40

S

Diode Forward Voltagea

VSD

IS = 2.7 A, VGS = 0 V

0.73

1.1

V

Dynamicb

Total Gate Charge

Qg

10

15

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 12.5 A

3.5

nC

Gate-Drain Charge

Qgd

2.6

Gate Resistance

Rg

0.5

1.6

2.7

W

Turn-On Delay Time

td(on)

15

25

Rise Time

tr

VDD = 15 V, RL = 15 W

5

10

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

45

70

ns

Fall Time

tf

8

15

Source-Drain Reverse Recovery Time

trr

IF = 2.7 A, di/dt = 100 A/ms

30

60

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

10

20

30

40

50

012345

VGS = 10 thru 4 V

TC = 125_C

−55_C

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

3 V

Codice articolo simile - SI4392DY-T1-E3

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Vishay Siliconix	SI4392DY	101Kb / 6P	N-Channel Reduced Qg, Fast Switching WFET® Rev. E, 12-Jun-06
Vishay Siliconix	SI4392DY	101Kb / 6P	N-Channel Reduced Qg, Fast Switching WFET® Rev. E, 12-Jun-06

More results

Descrizione simile - SI4392DY-T1-E3

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Vishay Siliconix	SI7392DP	56Kb / 5P	N-Channel Reduced Qg, Fast Switching WFET Rev. D, 26-Jul-04
	SI7392ADP	234Kb / 3P	N-Channel Reduced Qg, Fast Switching WFET Rev. B, 26-Jun-06
	SI4368DY	70Kb / 5P	N-Channel Reduced Qg, Fast Switching WFET Rev. A, 02-Feb-04
	SI4392DY	101Kb / 6P	N-Channel Reduced Qg, Fast Switching WFET® Rev. E, 12-Jun-06
	SI4390DY	44Kb / 5P	N-Channel Qg, Fast Switching WFET Rev. B, 19-May-03
	SI4394DY	70Kb / 5P	N-Channel Reduced Qdg, Fast Switching WFET Rev. A, 15-Mar-04
	SI4860DY	39Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFE Rev. C, 14-Apr-03
	SI7860DP-T1	147Kb / 7P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. E, 09-Feb-09
	SI4872DY	57Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. A, 17-Jul-00
	SI4850EY	61Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. D, 29-Mar-04

More results

SI4392DY-T1-E3 Scheda tecnica(PDF) 2 Page - Vishay Siliconix

SI4392DY-T1-E3 Scheda tecnica(HTML) 2 Page - Vishay Siliconix

Codice articolo simile - SI4392DY-T1-E3

Descrizione simile - SI4392DY-T1-E3

Html Pages

1 2 3 4 5

Scheda tecnica Scarica

Link URL