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2SD999CK Scheda tecnica(PDF) 1 Page - WILLAS ELECTRONIC CORP |
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2SD999CK Scheda tecnica(HTML) 1 Page - WILLAS ELECTRONIC CORP |
1 / 5 page PRIMARY CHARACTERISTICS SOT-89 PACKAGE PC 500mW VCEO 25V IC 1.0A VCE(sat) 0.4V hFE 200–400 TJ,Max 150℃ FEATURES MECHANICAL DATA Low Collector-Emitter Saturation Voltage Mini Power Type Package Excellent DC Current Gain Linearity Moisture Sensitivity Level 1 Case:Molded plastic, SOT-89 Polarity:As Above Marked Terminals :Plated terminals, solderable per MIL-STD-750,Method 2026 Epoxy : UL94-V0 rated flame retardant MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1)* VCE=1V, IC=100mA 200 400 DC current gain hFE(2)* VCE=1V, IC=1A 50 Collector-emitter saturation voltage VCE(sat)* IC=1A,IB=0.1A 0.4 V Base-emitter saturation voltage VBE(sat)* IC=1A,IB=0.1A 1.2 V Base -emitter voltage VBE* VCE=6V, IC=10mA 0.6 0.7 V Transition frequency fT VCE=6V,IC=10mA 130 MHz Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 22 pF *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW RθJA Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ 1. BASE 2. COLLECTOR 3. EMITTER MARKING CODE : CK 2015.01 www.willas.com.tw Rev. J01 P 1 |
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