Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
NEC |
NE32000
|
247Kb / 7P |
LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
|
California Eastern Labs |
NE350184C
|
269Kb / 8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
TriQuint Semiconductor |
TGA4506
|
124Kb / 9P |
K Band Low Noise Amplifier
|
TGA4506
|
663Kb / 10P |
K Band Low Noise Amplifier
|
California Eastern Labs |
NE3514S02
|
269Kb / 8P |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Technology Corp |
NE3514S02
|
202Kb / 11P |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
TriQuint Semiconductor |
TGA4506-SM
|
117Kb / 10P |
K Band Packaged Low Noise Amplifier
|
California Eastern Labs |
NE3517S03
|
310Kb / 8P |
K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
|
Renesas Technology Corp |
NE3517S03
|
208Kb / 11P |
K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
|
NE3517S03
|
208Kb / 11P |
K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
|