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CSD22206WT Scheda tecnica(PDF) 1 Page - Texas Instruments |
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CSD22206WT Scheda tecnica(HTML) 1 Page - Texas Instruments |
1 / 12 page -VGS - Gate-to-Source Voltage (V) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 D007 TC = 25°C, I D = -2 A TC = 125°C, I D = -2 A Qg - Gate Charge (nC) 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 D004 ID = -2 A VDS = -4 V G S S S S S D D D Gate Source Drain Product Folder Order Now Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD22206W SLPS689 – MAY 2017 CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 1 Features 1 • Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. Top View and Circuit Configuration Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage –8 V Qg Gate Charge Total (–4.5 V) 11.2 nC Qgd Gate Charge Gate-to-Drain 1.8 nC RDS(on) Drain-to-Source On Resistance VGS = –2.5 V 6.8 m Ω VGS = –4.5 V 4.7 VGS(th) Threshold Voltage –0.7 V Device Information DEVICE QTY MEDIA PACKAGE SHIP CSD22206W 3000 7-Inch Reel 1.50-mm × 1.50-mm Wafer BGA Package Tape and Reel CSD22206WT 250 Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage –8 V VGS Gate-to-Source Voltage –6 V ID Continuous Drain Current(1) –5 A Pulsed Drain Current(2) –108 A PD Power Dissipation 1.7 W TJ, Tstg Operating Junction, Storage Temperature –55 to 150 °C (1) Device operating at a temperature of 105°C. (2) Typ RθJA = 75°C/W ,mounted on FR4 material with maximum Cu mounting area, pulse width ≤ 100 μs, duty cycle ≤ 1%. RDS(on) vs VGS Gate Charge |
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