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FDC6020C Scheda tecnica(PDF) 5 Page - Fairchild Semiconductor |
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FDC6020C Scheda tecnica(HTML) 5 Page - Fairchild Semiconductor |
5 / 9 page FDC6020C RevB (W) Typical Characteristics : Q1 0 1 2 3 4 5 01234 56789 Qg, GATE CHARGE (nC) ID = -4.2A VDS = -5V -10V -15V 0 100 200 300 400 500 600 700 800 900 1000 1100 0 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) CISS COSS CRSS f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms RDS(ON) LIMIT VGS = -4.5V SINGLE PULSE RθJA = 102 oC/W TA = 25 oC 10ms 1ms 100µs 10µs 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 102°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. |
Codice articolo simile - FDC6020C |
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Descrizione simile - FDC6020C |
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