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AD5245BRJ100-R2 Scheda tecnica(PDF) 4 Page - Analog Devices

Il numero della parte AD5245BRJ100-R2
Spiegazioni elettronici  256-Position I2C Compatible Digital Potentiometer
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Produttore elettronici  AD [Analog Devices]
Homepage  http://www.analog.com
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AD5245
ELECTRICAL CHARACTERISTICS—10 kΩ, 50 kΩ, 100 kΩ VERSIONS
(VDD = 5 V ± 10%, or 3 V ± 10%; VA = VDD; VB = 0 V; –40°C < TA < +125°C; unless otherwise noted.)
Table 2.
Parameter
Symbol
Conditions
Min
Typ1
Max
Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resistor Differential Nonlinearity2
R-DNL
RWB, VA = no connect
–1
±0.1
+1
LSB
Resistor Integral Nonlinearity2
R-INL
RWB, VA = no connect
–2
±0.25
+2
LSB
Nominal Resistor Tolerance3
∆RAB
TA = 25°C
–30
+30
%
Resistance Temperature Coefficient
∆RAB/∆T
VAB = VDD,
Wiper = no connect
45
ppm/°C
Wiper Resistance
RW
VDD = 5 V
50
120
DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE (Specifications apply to all VRs)
Resolution
N
8
Bits
Differential Nonlinearity4
DNL
–1
±0.1
+1
LSB
Integral Nonlinearity4
INL
–1
±0.3
+1
LSB
Voltage Divider Temperature Coefficient
∆VW/∆T
Code = 0x80
15
ppm/°C
Full-Scale Error
VWFSE
Code = 0xFF
–3
–1
0
LSB
Zero-Scale Error
VWZSE
Code = 0x00
0
1
3
LSB
RESISTOR TERMINALS
Voltage Range5
VA,B,W
GND
VDD
V
Capacitance6 A, B
CA,B
f = 1 MHz, measured to
GND, Code = 0x80
45
pF
Capacitance6 W
CW
f = 1 MHz, measured to
GND, Code = 0x80
60
pF
Shutdown Supply Current7
IDD_SD
VDD = 5.5 V
0.01
1
µA
Common-Mode Leakage
ICM
VA = VB = VDD/2
1
nA
DIGITAL INPUTS AND OUTPUTS
Input Logic High
VIH
2.4
V
Input Logic Low
VIL
0.8
V
Input Logic High
VIH
VDD = 3 V
2.1
V
Input Logic Low
VIL
VDD = 3 V
0.6
V
Input Current
IIL
VIN = 0 V or 5 V
±1
µA
Input Capacitance6
CIL
5
pF
POWER SUPPLIES
Power Supply Range
VDD RANGE
2.7
5.5
V
Supply Current
IDD
VIH = 5 V or VIL = 0 V
3
8
µA
Power Dissipation8
PDISS
VIH = 5 V or VIL = 0 V,
VDD = 5 V
0.2
mW
Power Supply Sensitivity
PSS
∆VDD = +5 V ± 10%,
Code = Midscale
±0.02
±0.05
%/%
DYNAMIC CHARACTERISTICS6, 9
Bandwidth –3dB
BW
RAB = 10 kΩ/50 kΩ/100 kΩ,
Code = 0x80
600/100/40
kHz
Total Harmonic Distortion
THDW
VA =1 V rms, VB = 0 V,
f = 1 kHz, RAB = 10 kΩ
0.05
%
VW Settling Time (10 kΩ/50 kΩ/100 kΩ)
tS
VA = 5 V, VB = 0 V,
±1 LSB error band
2
µs
Resistor Noise Voltage Density
eN_WB
RWB = 5 kΩ, RS = 0
9
nV/√Hz
Rev. 0 | Page 4 of 16


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