BAS100ATB6_R2_00001 datasheet(2/5 Pages) PANJIT

Il numero della parte	BAS100ATB6_R2_00001

Spiegazioni elettronici	SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES

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PAGE . 2

June 2,2016REV.02

BAS100ATB6

ELECTRICAL CHARACTERISTICS (TA=25

O

C unless otherwise noted)

PARAMETER

SYMBOL

Test Condition

MIN.

TYP.

MAX.

UNITS

Breakdown Voltage

VBR

I R=200ATJ=25oC100

-

V

Instantaneous Forward Voltage

VF

I F=0.4A

I F=0.5A

TJ=25oC

-

0.76

0.8

0.81

0.85

V

I F=0.4A

I F=0.5A

TJ=125oC

-

0.63

0.66

-

V

Reverse Current

I R

VR=80 V

TJ=25oC-

20

-

nA

VR=100 V

TJ=25oC

TJ=125oC

-

65

1

-



A

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0

25

50

75

100

125

150

TC, Case Temperature (°C)

0.001

0.01

0.1

1

10

100

1000

20

40

60

80

100

Percent of Rated Peak Reverse Voltage (%)

TJ = 25°C

TJ = 75°C

TJ = 125°C

TJ = 150°C

Fig.3 Typical Reverse Characteristics

Fig.4 Typical Forward Characteristics

Fig.1 Forward Current Derating Curve

Fig.2 Typical Junction Capacitance

1

10

100

0.1

1

10

100

VR, Reverse Bias Voltage (V)

0.01

0.1

1

0

0.2

0.4

0.6

0.8

1

VF, Forward Voltage (V)

TJ = 150°C

TJ = 125°C

TJ = 25°C

TJ = 75°C

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