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TS110-8 Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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2 / 10 page Characteristics TS110-8 2/10 DocID026589 Rev 1 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit IT(RMS) On-state rms current (180° conduction angle) TO-92 Tl = 53 °C 1.25 A SMBflat-3L Tc = 109 °C IT(AV) Average on-state current (180° conduction angle) TO-92 TI = 53 °C 0.8 A SMBflat-3L Tc = 109 °C ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj initial = 25 °C 21 A tp = 10 ms 20 1st step: one surge every 5 seconds, 25 surges 2nd step: one surge every 5 seconds, 25 surges tp = 10 ms Tamb = 90 °C 25 times 12 A 25 times 16 A I²tI²t Value for fusing tp = 10 ms, 25 °C 2 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 50 Hz, 125 °C 100 A/µs Non repetitive critical current rate of rise at break-over, see Figure 17, VD > VDSm 200 VDRM, VRRM Repetitive peak off-state AC voltage, RGK = 220 Ω Tj = 125 °C 800 V VDSm Non-repetitive direct surge peak off-state voltage, RGK = 220 Ω tp = 10 ms Tj = 25 °C 1250 V VRSM Non-repetitive reverse surge peak off-state voltage, RGK = 220 Ω tp = 10 ms Tj = 25 °C 900 V IGM Peak gate current tp = 20 µs Tj = 125 °C 1.2 A PG(AV) Average gate power dissipation Tj = 125 °C 0.2 W Tstg Storage junction temperature range - 40 to + 150 °C Tj Operating junction temperature range - 40 to + 125 Table 3. Electrical characteristics Symbol Test conditions Value Unit IGT VD = 12 V, RL = 140Ω Tj = 25 °C Min. 1 µA Max. 100 VGT Max. 0.8 V VGD VD = VDRM, RL = 33 kΩ, RGK = 220 Ω Tj = 125 °C Min. 0.1 V VRG IRG = 2 mA Tj = 25 °C Min. 7.5 V IH IT = 50 mA, RGK = 220 Ω Tj = 25 °C Max. 12 mA IL IG = 5 mA, RGK = 220 Ω Tj = 25 °C Max. 12 mA dV/dt VD = 67% VDRM, RGK = 220 Ω Tj = 125 °C Min. 200 V/µs |
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