TS110-8 datasheet(2/10 Pages) STMICROELECTRONICS

Il numero della parte	TS110-8

Spiegazioni elettronici	High surge voltage 1.25 A SCR for circuit breaker

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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Characteristics

TS110-8

2/10

DocID026589 Rev 1

1

Characteristics

Table 2. Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current (180° conduction angle)

TO-92

Tl = 53 °C

1.25

A

SMBflat-3L

Tc = 109 °C

IT(AV)

Average on-state current

(180° conduction angle)

TO-92

TI = 53 °C

0.8

A

SMBflat-3L

Tc = 109 °C

ITSM

Non repetitive surge peak on-state current

tp = 8.3 ms

Tj initial = 25 °C

21

A

tp = 10 ms

20

1st step: one surge every 5 seconds, 25 surges

2nd step: one surge every 5 seconds, 25 surges

tp = 10 ms

Tamb = 90 °C

25 times 12 A

25 times 16 A

I²tI²t Value for fusing

tp = 10 ms, 25 °C

2

A2S

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT, tr ≤ 100 ns

F = 50 Hz, 125 °C

100

A/µs

Non repetitive critical current rate of rise at break-over, see Figure 17, VD > VDSm

200

VDRM,

VRRM

Repetitive peak off-state AC voltage, RGK = 220 Ω

Tj = 125 °C

800

V

VDSm

Non-repetitive direct surge peak off-state voltage,

RGK = 220 Ω

tp = 10 ms

Tj = 25 °C

1250

V

VRSM

Non-repetitive reverse surge peak off-state

voltage, RGK = 220 Ω

tp = 10 ms

Tj = 25 °C

900

V

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

1.2

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.2

W

Tstg

Storage junction temperature range

- 40 to + 150

°C

Tj

Operating junction temperature range

- 40 to + 125

Table 3. Electrical characteristics

Symbol

Test conditions

Value

Unit

IGT

VD = 12 V, RL = 140Ω

Tj = 25 °C

Min.

1

µA

Max.

100

VGT

Max.

0.8

V

VGD

VD = VDRM, RL = 33 kΩ, RGK = 220 Ω

Tj = 125 °C

Min.

0.1

V

VRG

IRG = 2 mA

Tj = 25 °C

Min.

7.5

V

IH

IT = 50 mA, RGK = 220 Ω

Tj = 25 °C

Max.

12

mA

IL

IG = 5 mA, RGK = 220 Ω

Tj = 25 °C

Max.

12

mA

dV/dt

VD = 67% VDRM, RGK = 220 Ω

Tj = 125 °C

Min.

200

V/µs

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