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STP20NM65N Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STP20NM65N
Spiegazioni elettronici  Low gate input resistance
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
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Electrical characteristics STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N
4/18
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1mA, VGS = 0
650
V
dv/dt (1)
1.
Characteristic value at turn off on inductive load
Drain source voltage slope
Vdd=520V, Id=19A,
Vgs=10V
35
V/ns
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, @125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 9.5 A
0.16
0.19
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
VDS=15 V, ID = 9.5A
14
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50V, f = 1 MHz,
VGS = 0
2500
120
10
pF
pF
pF
Coss eq
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0V, VDS = 0V to 520V
310
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520V, ID = 19A,
VGS = 10V,
(see Figure 19)
70
10
40
nC
nC
nC
RG
Gate input resistance
f=1 MHz gate DC bias = 0
Test signal level = 20mV
open drain
2.5


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