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STP140N6F7 Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STP140N6F7
Spiegazioni elettronici  High avalanche ruggedness
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP140N6F7 Scheda tecnica(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP140N6F7
4/12
DocID027726 Rev 2
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
60
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 60 V
1
µA
VGS = 0 V, VDS = 60 V,
Tcase = 125 °C
100
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = +20 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
4
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 40 A
0.0031
0.0035
Ω
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 V
-
3100
-
pF
Coss
Output capacitance
-
1520
-
Crss
Reverse transfer
capacitance
-
193
-
Qg
Total gate charge
VDD = 30 V, ID = 80 A,
VGS = 10 V (see Figure 14:
"Gate charge test circuit")
-
55
-
nC
Qgs
Gate-source charge
-
19
-
Qgd
Gate-drain charge
-
18
-
Table 6: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 30 V, ID = 40 A
RG = 4.7
Ω, VGS = 10 V (see
Figure 13: "Switching times
test circuit for resistive load"
and Figure 18: "Switching
time waveform")
-
24
-
ns
tr
Rise time
-
68
-
td(off)
Turn-off delay time
-
39
-
tf
Fall time
-
20
-
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VSD
(1)
Forward on voltage
VGS = 0 V, ISD = 80 A
-
1.2
V
trr
Reverse recovery time
ISD = 80 A, di/dt = 100 A/µs,
VDD = 48 V (see Figure 15:
"Test circuit for inductive
load switching and diode
recovery times")
-
42.4
ns
Qrr
Reverse recovery
charge
-
38.2
nC
IRRM
Reverse recovery
current
-
1.8
A
Notes:
(1)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.


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