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STP140N6F7 Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STP140N6F7 Scheda tecnica(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STP140N6F7 4/12 DocID027726 Rev 2 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 60 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 60 V 1 µA VGS = 0 V, VDS = 60 V, Tcase = 125 °C 100 IGSS Gate-body leakage current VDS = 0 V, VGS = +20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 40 A 0.0031 0.0035 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 3100 - pF Coss Output capacitance - 1520 - Crss Reverse transfer capacitance - 193 - Qg Total gate charge VDD = 30 V, ID = 80 A, VGS = 10 V (see Figure 14: "Gate charge test circuit") - 55 - nC Qgs Gate-source charge - 19 - Qgd Gate-drain charge - 18 - Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 30 V, ID = 40 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Switching times test circuit for resistive load" and Figure 18: "Switching time waveform") - 24 - ns tr Rise time - 68 - td(off) Turn-off delay time - 39 - tf Fall time - 20 - Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage VGS = 0 V, ISD = 80 A - 1.2 V trr Reverse recovery time ISD = 80 A, di/dt = 100 A/µs, VDD = 48 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 42.4 ns Qrr Reverse recovery charge - 38.2 nC IRRM Reverse recovery current - 1.8 A Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
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