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STP23N80K5 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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3 / 13 page STP23N80K5 Electrical ratings DocID028451 Rev 1 3/13 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±30 V ID Drain current (continuous) at Tcase = 25 °C 16 A Drain current (continuous) at Tcase = 100 °C 10 IDM(1) Drain current (pulsed) 64 A PTOT Total dissipation at Tcase = 25 °C 190 W dv/dt(2) Peak diode recovery voltage slope 4.5 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 16 A, di/dt=100 A/μs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS. (3) VDS ≤ 640 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.66 °C/W Rthj-amb Thermal resistance junction-ambient 30 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR(1) Avalanche current, repetitive or not repetitive 5 A EAS(2) Single pulse avalanche energy 400 mJ Notes: (1) Pulse width limited by Tjmax. (2) starting Tj = 25 °C, ID = IAR, VDD = 50 V. |
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