STP16N65M2 datasheet(4/16 Pages) STMICROELECTRONICS

Il numero della parte	STP16N65M2

Spiegazioni elettronici	N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

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Electrical characteristics

STP16N65M2, STU16N65M2

4/16

DocID027086 Rev 1

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

650

V

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 650 V

1

µA

VGS = 0, VDS = 650 V,

TC=125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 5.5 A

0.32

0.36

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 100 V,

f = 1 MHz

-

718

-

pF

Coss

Output capacitance

-

32

-

pF

Crss

Reverse transfer

capacitance

-1.1

-

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 520 V

-

189

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

5.2

-

Ω

Qg

Total gate charge

VDD = 520 V, ID = 11 A,

VGS = 10 V (see Figure 17)

-19.5

-

nC

Qgs

Gate-source charge

-

4

-

nC

Qgd

Gate-drain charge

-

8.3

-

nC

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