STU13N60M2 datasheet(7/18 Pages) STMICROELECTRONICS

Il numero della parte	STU13N60M2

Spiegazioni elettronici	N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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DocID023937 Rev 5

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STP13N60M2, STU13N60M2, STW13N60M2

Electrical characteristics

Figure 8. Normalized V(BR)DSS vs temperature

Figure 9. Static drain-source on-resistance

Figure 10. Gate charge vs gate-source voltage

Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage vs

temperature

Figure 13. Normalized on-resistance vs

temperature

V(BR)DSS

-50

TJ(°C)

(norm)

0

0.9

0.94

0.98

1.02

1.06

ID=1 mA

50

100

1.1

AM15714v1

RDS(on)

0.360

0.350

0.340

0.330

0

4

ID(A)

(

Ω)

2

6

0.370

8

10

VGS=10V

AM15715v1

VGS

6

4

2

0

Qg(nC)

(V)

8

4

10

VDD=480V

300

200

100

0

400

VDS

12

16

500

VDS

(V)

ID=11A

AM15716v1

C

10

1

0.1

10

VDS(V)

(pF)

1

100

Ciss

Coss

Crss

100

1000

AM15717v1

VGS(th)

0.9

0.8

0.7

0.6

TJ(°C)

(norm)

-50

1.0

ID=250µA

0

50

100

1.1

AM15718v1

RDS(on)

2.1

1.7

1.3

0.9

TJ(°C)

(norm)

0.5

-50

0

50

100

ID=5.5 A

VGS=10V

AM15719v1

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