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STU13N60M2 Scheda tecnica(PDF) 7 Page - STMicroelectronics |
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STU13N60M2 Scheda tecnica(HTML) 7 Page - STMicroelectronics |
7 / 18 page DocID023937 Rev 5 7/18 STP13N60M2, STU13N60M2, STW13N60M2 Electrical characteristics Figure 8. Normalized V(BR)DSS vs temperature Figure 9. Static drain-source on-resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature V(BR)DSS -50 TJ(°C) (norm) 0 0.9 0.94 0.98 1.02 1.06 ID=1 mA 50 100 1.1 AM15714v1 RDS(on) 0.360 0.350 0.340 0.330 0 4 ID(A) ( Ω) 2 6 0.370 8 10 VGS=10V AM15715v1 VGS 6 4 2 0 0 Qg(nC) (V) 8 8 4 10 VDD=480V 300 200 100 0 400 VDS 12 16 500 VDS (V) ID=11A AM15716v1 C 10 1 0.1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss 100 1000 AM15717v1 VGS(th) 0.9 0.8 0.7 0.6 TJ(°C) (norm) -50 1.0 ID=250µA 0 50 100 1.1 AM15718v1 RDS(on) 2.1 1.7 1.3 0.9 TJ(°C) (norm) 0.5 -50 0 50 100 ID=5.5 A VGS=10V AM15719v1 |
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