STD3NK80Z datasheet(3/13 Pages) STMICROELECTRONICS

Il numero della parte	STD3NK80Z

Spiegazioni elettronici	N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET

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STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =1mA, VGS = 0

800

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 20V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID =50 µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 1.25 A

3.8

4.5

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =15V, ID = 1.25 A

2.1

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V,f= 1MHz,VGS = 0

485

57

11

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS =0V, VDS = 0V to 640V

22

pF

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD =400 V, ID = 1.25 A

RG = 4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

17

27

36

40

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =640 V, ID = 2.5 A,

VGS =10 V

19

3.2

10.8

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

2.5

10

A

VSD (1)

Forward On Voltage

ISD = 2.5 A, VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 2.5 A, di/dt = 100 A/µs

VDD =50 V,Tj = 25°C

(see test circuit, Figure 5)

384

1600

8.4

ns

nC

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 2.5 A, di/dt = 100 A/µs

VDD =50 V,Tj = 150°C

(see test circuit, Figure 5)

474

2100

8.8

ns

nC

A

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